IEEE - Institute of Electrical and Electronics Engineers, Inc. - A 13 ns Mb CMOS EPROM using 1-T FAMOS technology

Proceedings of IEEE International Solid-State Circuits Conference - ISSCC '93

Author(s): Rosendale, G. ; Payne, J. ; Pathak, S. ; Randazzo, T. ; Larsen, B. ; Erickson, D. ; Allum, D. ; Blaha, F.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1993
Conference Location: San Francisco, CA, USA, USA
Conference Date: 24 February 1993
Page(s): 42 - 43
ISBN (Paper): 0-7803-0987-1
DOI: 10.1109/ISSCC.1993.280092
Regular:

A 128-kB*8-b EPROM (electrically programmable read-only memory) with a 1-T FAMOS cell is described which demonstrates a 13-ns address access time, allowing the elimination of shadow SRAM (static... View More

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