IEEE - Institute of Electrical and Electronics Engineers, Inc. - Simulation of two-dimensional etch profile of silicon during orientation-dependent anisotropic etching

Author(s): Koide, A. ; Sato, K. ; Tanaka, S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1991
Conference Location: Nara, Japan
Conference Date: 30 January 1991
Page(s): 216 - 220
ISBN (Paper): 0-87942-641-1
DOI: 10.1109/MEMSYS.1991.114799
Regular:

A program for the simulation of two-dimensional anisotropic etching profiles has been developed for application to the design of fabrication processes for micromechanical silicon devices. Using... View More

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