IEEE - Institute of Electrical and Electronics Engineers, Inc. - Band model for explaining new effects observed in electromechanical micromachining of Si

Author(s): Ozdemir, H.C. ; Smith, J.C.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1991
Conference Location: Nara, Japan
Conference Date: 30 January 1991
Page(s): 198 - 201
ISBN (Paper): 0-87942-641-1
DOI: 10.1109/MEMSYS.1991.114795
Regular:

An energy band diagram model has been utilized to characterize the electrochemical behavior of Si. A new passivation phenomenon is presented and the underlying mechanisms of this new passivation... View More

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