IEEE - Institute of Electrical and Electronics Engineers, Inc. - Simulation of charge transfer in GaAs cermet-gate CCDs

Author(s): Pennathur, S. ; Kwok, H.H.L.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1991
Conference Location: Victoria, BC, Canada
Conference Date: 9 May 1991
ISBN (Paper): 0-87942-638-1
DOI: 10.1109/PACRIM.1991.160791
Regular:

Computer simulations of charge transport in GaAs cermet-gate charge-coupled devices (CCDs) are reported. A finite difference scheme was used to simulate charge evolution between successive clock... View More

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