IEEE - Institute of Electrical and Electronics Engineers, Inc. - Nature and densities of gap states in a-Si:H and a-SiC:H obtained from the quantitative analysis of photoconductivity

Author(s): Gunes, M. ; Dawson, R.M. ; Lee, S. ; Wronski, C.R. ; Maley, N. ; Li, Y.M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1991
Conference Location: Las Vegas, NV, USA
Conference Date: 7 October 1991
ISBN (Paper): 0-87942-636-5
DOI: 10.1109/PVSC.1991.169473
Regular:

The nature, distribution, and densities of midgap states in solar-cell-grade intrinsic hydrogenated amorphous silicon (a-Si:H) and hydrogenated silicon carbide (a-SiC:H) have been investigated... View More

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