IEEE - Institute of Electrical and Electronics Engineers, Inc. - The effect of dopant density on the radiation resistance of MOCVD InP solar cells

Author(s): Walters, R.J. ; Keavney, C.J. ; Messenger, S.R. ; Summers, G.P. ; Burke, E.A.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1991
Conference Location: Las Vegas, NV, USA
Conference Date: 7 October 1991
ISBN (Paper): 0-87942-636-5
DOI: 10.1109/PVSC.1991.169471
Regular:

The effect of base dopant concentration (N/sub a/) on the radiation resistance of n/sup +/p InP solar cells grown by metallorganic chemical vapor deposition (MOCVD) has been measured and analyzed.... View More

Advertisement