IEEE - Institute of Electrical and Electronics Engineers, Inc. - Growth and properties of amorphous silicon films grown using pulsed-flow reactive plasma beam epitaxy

Author(s): Dalal, V.L. ; Knox, R. ; Kandalaft, N. ; Baldwin, G.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1991
Conference Location: Las Vegas, NV, USA
Conference Date: 7 October 1991
ISBN (Paper): 0-87942-636-5
DOI: 10.1109/PVSC.1991.169437
Regular:

The growth and properties of a-Si:H films grown using a novel deposition technique, reactive plasma beam epitaxy, are discussed. In this technique, a remote H plasma produced in a microwave-ECR... View More

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