IEEE - Institute of Electrical and Electronics Engineers, Inc. - Wide-bandgap hydrogenated amorphous silicon carbide prepared from an aromatic carbon source

Author(s): Nevin, W.A. ; Yamagishi, H. ; Asaoka, K. ; Tawada, Y.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1991
Conference Location: Las Vegas, NV, USA
Conference Date: 7 October 1991
ISBN (Paper): 0-87942-636-5
DOI: 10.1109/PVSC.1991.169427
Regular:

By utilizing the aromatic molecule xylene, hydrogenated amorphous silicon carbide films are prepared for the first time from an aromatic carbon source. Good-quality films are obtained, over a wide... View More

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