IEEE - Institute of Electrical and Electronics Engineers, Inc. - Device quality amorphous silicon alloy materials

Author(s): Lin, G.H. ; He, M.Z. ; Bockris, J.M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1991
Conference Location: Las Vegas, NV, USA
Conference Date: 7 October 1991
ISBN (Paper): 0-87942-636-5
DOI: 10.1109/PVSC.1991.169420
Regular:

Device-quality hydrogenated amorphous silicon selenium and amorphous silicon sulfur alloys were prepared by plasma-enhanced chemical vapor deposition with hydrogen dilution. The flow rate ratio of... View More

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