IEEE - Institute of Electrical and Electronics Engineers, Inc. - 12% two-stacked a-Si:H tandem cells with a new p-layer structure

Author(s): Ichikawa, Y. ; Fujikake, S. ; Ohta, H. ; Sasaki, T. ; Sakai, H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1991
Conference Location: Las Vegas, NV, USA
Conference Date: 7 October 1991
ISBN (Paper): 0-87942-636-5
DOI: 10.1109/PVSC.1991.169417
Regular:

Hydrogenated amorphous silicon oxide (a-SiO:H) was applied to the p-layer of a p-i-n single-junction a-Si solar cell. The boron-doped a-SiO:H film deposited by conventional glow discharge... View More

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