IEEE - Institute of Electrical and Electronics Engineers, Inc. - Novel type of ZnO studied in combination with 1.5 eV a-SiGe:H pin diodes

Author(s): Weller, H.C. ; Mauch, R.H. ; Bauer, G.H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1991
Conference Location: Las Vegas, NV, USA
Conference Date: 7 October 1991
ISBN (Paper): 0-87942-636-5
DOI: 10.1109/PVSC.1991.169416
Regular:

Low gap 1.5 eV a-SiGe:H pin diodes with p-a-SiC:H windows (E/sub g/=1.95 eV) have been deposited on conventional SnO/sub x/ and novel Al-doped ZnO (ZnO:Al) to compare the influence of these TCOs... View More

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