IEEE - Institute of Electrical and Electronics Engineers, Inc. - Investigation of the role of a-Si:H based-alloy solar cell thickness on 1.00 MeV proton irradiation resistance

Author(s): Abdulaziz, S.S. ; Woodyard, J.R.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1991
Conference Location: Las Vegas, NV, USA
Conference Date: 7 October 1991
ISBN (Paper): 0-87942-636-5
DOI: 10.1109/PVSC.1991.169408
Regular:

The role of thickness and composition in the 1.00 MeV proton radiation resistance of hydrogenated amorphous silicon based-alloys solar cells is reported. Rutherford backscattering spectrometry is... View More

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