IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effect of light induced defects on the quantum efficiency of amorphous silicon Schottky barrier solar cell structures

Author(s): Malone, C.T. ; Nicque, J.L. ; Fonash, S.J. ; Wronski, C.R. ; Bennett, M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1991
Conference Location: Las Vegas, NV, USA
Conference Date: 7 October 1991
ISBN (Paper): 0-87942-636-5
DOI: 10.1109/PVSC.1991.169404
Regular:

Changes in internal quantum efficiency (QE) of n-i-Pt Schottky barrier solar cells are directly correlated with light-induced defects in the bulk a-Si:H. These short-circuit QEs measured on cells... View More

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