IEEE - Institute of Electrical and Electronics Engineers, Inc. - Physical, chemical, and structural modifications to thin-film CuInSe/sub 2/-based photovoltaic devices

Author(s): Tuttle, J.R. ; Contreras, M. ; Albin, D.S. ; Noufi, R.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1991
Conference Location: Las Vegas, NV, USA
Conference Date: 7 October 1991
ISBN (Paper): 0-87942-636-5
DOI: 10.1109/PVSC.1991.169374
Regular:

Two approaches to the modification and improvement of CuInSe/sub 2/-based photovoltaic devices are investigated. The incorporation of wide gap CuInSe/sub 2/-based alloys at the interface is... View More

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