IEEE - Institute of Electrical and Electronics Engineers, Inc. - Identification of 1/f diffusion and recombination noise sources in bipolar transistors

Author(s): Decoutere, S. ; Deferm, L. ; Vanhorebeek, G. ; Claeys, C. ; Declerck, G.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1990
Conference Location: San Francisco, CA, USA, USA
Conference Date: 9 December 1990
Page(s): 25 - 28
ISSN (Paper): 0163-1918
DOI: 10.1109/IEDM.1990.237234
Regular:

A method is proposed to identify 1/f noise sources in bipolar transistors related to mobility fluctuations in the base and collector current and to recombination at the surface of the emitter/base... View More

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