IEEE - Institute of Electrical and Electronics Engineers, Inc. - Low threshold and low internal loss 1.55- mu m strained-layer single quantum well lasers

Author(s): Zah, C.E. ; Bhat, R. ; Cheung, K.W. ; Andreadakis, N.C. ; Menocal, S.G. ; Wu, T.C. ; Favire, F.J. ; Xoza, M. ; Hwang, D.M. ; Lee, T.P.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1990
Conference Location: San Francisco, CA, USA, USA
Conference Date: 9 December 1990
Page(s): 129 - 131
ISSN (Paper): 0163-1918
DOI: 10.1109/IEDM.1990.237210
Regular:

Low-threshold lasers are important for minimizing the power consumption and the crosstalk of parallel optical interconnects in switching and supercomputer applications. Low-threshold (319 A/cm/sup... View More

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