IEEE - Institute of Electrical and Electronics Engineers, Inc. - Sub-30ps ECL circuits using high-f/sub T/ Si and SiGe epitaxial base SEEW transistors

Author(s): Burghartz, J.N. ; Comfort, J.H. ; Patton, G.L. ; Cressler, J.D. ; Meyerson, B.S. ; Stork, J.M.C. ; Sun, J.Y.-C. ; Scilla, G. ; Warnock, J. ; Ginsberg, B.J. ; Jenkins, K. ; Toh, K.-Y. ; Harame, D.L. ; Mader, S.R.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1990
Conference Location: San Francisco, CA, USA, USA
Conference Date: 9 December 1990
Page(s): 297 - 300
ISSN (Paper): 0163-1918
DOI: 10.1109/IEDM.1990.237171
Regular:

A high-performance bipolar technology is presented which involves Si and SiGe epitaxial base formation in a selective epitaxy emitter window (SEEW) structure. Si transistors have cut-off... View More

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