IEEE - Institute of Electrical and Electronics Engineers, Inc. - A new monitor to predict hot-carrier damage of PMOS transistors

Author(s): Woltjer, R. ; Paulzen, G.M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1990
Conference Location: San Francisco, CA, USA, USA
Conference Date: 9 December 1990
Page(s): 561 - 564
ISSN (Paper): 0163-1918
DOI: 10.1109/IEDM.1990.237136
Regular:

Damage due to hot-carrier degradation of PMOS transistors is analyzed in detail for various transistor types. The authors describe the worst-case degradation mechanism and propose a new damage... View More

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