IEEE - Institute of Electrical and Electronics Engineers, Inc. - A capacitor-over-bit-line (COB) cell with a hemispherical-grain storage node for 64 Mb DRAMs

Author(s): Sakao, M. ; Kasai, N. ; Ishijima, T. ; Ikawa, E. ; Watanabe, H. ; Terada, K. ; Kikkawa, T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1990
Conference Location: San Francisco, CA, USA, USA
Conference Date: 9 December 1990
Page(s): 655 - 658
ISSN (Paper): 0163-1918
DOI: 10.1109/IEDM.1990.237114
Regular:

A novel capacitor-over-bit-line (COB) cell with a hemispherical-grain (HSG) poly-Si storage node has been developed. This memory cell provides large storage capacitance by increasing the... View More

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