IEEE - Institute of Electrical and Electronics Engineers, Inc. - Characterization and modeling of the temperature dependence of lateral DMOS transistors for high-temperature applications of power ICs

Author(s): Dolny, G. ; Nostrand, G. ; Hill, K.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1990
Conference Location: San Francisco, CA, USA, USA
Conference Date: 9 December 1990
Page(s): 789 - 792
ISSN (Paper): 0163-1918
DOI: 10.1109/IEDM.1990.237043
Regular:

A comprehensive experimental characterization of lateral DMOS electrical parameters over the temperature range 30-300 degrees C is presented. Simple analytic models are used to explain the... View More

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