IEEE - Institute of Electrical and Electronics Engineers, Inc. - Power MOSFETs having Schottky barrier drain contact

Author(s): Sakurai, K. ; Nishimura, T. ; Obinata, S. ; Momota, S. ; Nakajima, T. ; Tagami, S. ; Furuhata, S. ; Inakoshi, Y.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1990
Conference Location: Tokyo, Japan
Conference Date: 4 April 1990
Page(s): 126 - 130
ISSN (Paper): 1063-6854
DOI: 10.1109/ISPSD.1990.991072
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