IEEE - Institute of Electrical and Electronics Engineers, Inc. - 40 V BiCMOS technology with polysilicon emitter structure

Author(s): Yamada, S. ; Yamauchi, T. ; Tokuriki, M. ; Inayoshi, X.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1990
Conference Location: Tokyo, Japan
Conference Date: 4 April 1990
Page(s): 86 - 90
ISSN (Paper): 1063-6854
DOI: 10.1109/ISPSD.1990.991065
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