IEEE - Institute of Electrical and Electronics Engineers, Inc. - Influence of the P type doping of the InP cladding layer on the threshold current density in 1.5/spl mu/m Q.W. lasers

Author(s): Sermage, B. ; Blez, M. ; Kazmierski, C. ; Ougazzaden, A. ; Mircea, A. ; Bouley, J.C.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1990
Conference Location: Davos, Switzerland, Switzerland
Conference Date: 9 September 1990
Page(s): 192 - 193
DOI: 10.1109/ISLC.1990.764486
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