IEEE - Institute of Electrical and Electronics Engineers, Inc. - Carrier recombination rates in GaAs/AlGaAs and strained InGaAs/GaAs quantum wells under high levels of excitation

Author(s): Chen, Y.C. ; Waters, R.G. ; Coleman, J.J. ; Bour, D.P. ; Wang, P.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1990
Conference Location: Davos, Switzerland, Switzerland
Conference Date: 9 September 1990
Page(s): 182 - 183
DOI: 10.1109/ISLC.1990.764481
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