IEEE - Institute of Electrical and Electronics Engineers, Inc. - High power 0.98 /spl mu/m InGaAs-GaAs strained layer buried heterostructure lasers

Author(s): Beernink, K.J. ; Alwan, J.J. ; York, P.K. ; Coleman, J.J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1990
Conference Location: Davos, Switzerland, Switzerland
Conference Date: 9 September 1990
Page(s): 56 - 57
DOI: 10.1109/ISLC.1990.764426
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