IEEE - Institute of Electrical and Electronics Engineers, Inc. - Neural network proximity effect corrections for electron beam lithography

Author(s): Frye, R.C. ; Rietman, E.A. ; Cummings, K.D.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1990
Conference Location: Los Angeles, CA, USA, USA
Conference Date: 4 November 1990
Page(s): 704 - 706
ISBN (Paper): 0-87942-597-0
DOI: 10.1109/ICSMC.1990.142210
Regular:

The use of a neural network to compute corrections for images written by electron beams to eliminate the proximity effects caused by electron scattering is described. Optical local changes in the... View More

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