IEEE - Institute of Electrical and Electronics Engineers, Inc. - Lateral spread of high energy implanted ions studied by electronic test structures

Author(s): Ueda, T. ; Aoki, H. ; Kinoshita, Y. ; Wada, S. ; Miyatake, H. ; Kudo, J. ; Ashida, T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1990
Conference Location: Kyoto, Japan
Conference Date: 18 March 1990
Page(s): 183 - 187
ISBN (Paper): 0-87942-588-1
DOI: 10.1109/ICMTS.1990.161737
Regular:

The lateral spread of high-energy implanted ions in Si is studied by electronic test structures. It is shown that the ions implanted through thick overlying layers spread significantly in the... View More

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