IEEE - Institute of Electrical and Electronics Engineers, Inc. - Measurement of lateral diffusion on technologies with polysilicon doping source with misalignment correction

Author(s): Anguita, J. ; Perello, C. ; Lozano, M. ; Cane, C. ; Lora-Tamayo, E.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1990
Conference Location: Kyoto, Japan
Conference Date: 18 March 1990
Page(s): 175 - 177
ISBN (Paper): 0-87942-588-1
DOI: 10.1109/ICMTS.1990.161735
Regular:

A novel test structure consisting of a varying length depletion IGFET (insulated-gate field effect transistor) with a shorted polysilicon gate-source junction is presented. This structure makes it... View More

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