IEEE - Institute of Electrical and Electronics Engineers, Inc. - Improvement of the triangular MOS transistor for misalignment measurement

Author(s): Lozano, M. ; Cane, C. ; Perello, C. ; Anguita, J. ; Lora-Tamayo, E.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1990
Conference Location: Kyoto, Japan
Conference Date: 18 March 1990
Page(s): 119 - 122
ISBN (Paper): 0-87942-588-1
DOI: 10.1109/ICMTS.1990.161724
Regular:

An improvement of the triangular gate MOS transistor for misalignment measurement between gate and active area levels is presented. The number of devices required for the simultaneous... View More

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