IEEE - Institute of Electrical and Electronics Engineers, Inc. - Gate oxide thickness measurement using Fowler-Nordheim tunneling

Author(s): Ashton, R.A.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1990
Conference Location: Kyoto, Japan
Conference Date: 18 March 1990
Page(s): 57 - 60
ISBN (Paper): 0-87942-588-1
DOI: 10.1109/ICMTS.1990.161713
Regular:

It is demonstrated that the use of the Fowler-Nordheim tunneling current as a monitor of gate oxide thickness is possible if precautions are made to screen out less than ideal oxides. A very... View More

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