IEEE - Institute of Electrical and Electronics Engineers, Inc. - Analysis of process-induced charges created in MOSFETs and related collection test structures

Author(s): Dars, P. ; Basset, R. ; Merckel, G.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1990
Conference Location: Kyoto, Japan
Conference Date: 18 March 1990
Page(s): 51 - 55
ISBN (Paper): 0-87942-588-1
DOI: 10.1109/ICMTS.1990.161712
Regular:

The use of gate isolated test transistors can lead to the creation of process-induced charges which cannot occur on transistors implemented on circuits. A test structure has been designed to... View More

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