IEEE - Institute of Electrical and Electronics Engineers, Inc. - Extraction of the interfacial generation velocity in MOSFETs

Author(s): Dugas, J. ; Jerisian, R. ; Oualid, J. ; Labrunye, D. ; Mirabel, J.M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1990
Conference Location: Kyoto, Japan
Conference Date: 18 March 1990
Page(s): 11 - 15
ISBN (Paper): 0-87942-588-1
DOI: 10.1109/ICMTS.1990.161705
Regular:

A novel method based upon gate controlled diode static characteristics is proposed to determine the interfacial generation velocity S/sub o/ in MOSFETs. S/sub o/ is deduced from the measurement of... View More

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