IEEE - Institute of Electrical and Electronics Engineers, Inc. - Generation lifetime in fully depleted, enhancement mode SOI MOSFETs

Author(s): Karulkar, P.C. ; Belk, P.E.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1990
Conference Location: Key West, FL, USA, USA
Conference Date: 2 October 1990
Page(s): 139 - 140
ISBN (Paper): 0-87942-573-3
DOI: 10.1109/SOSSOI.1990.145750
Regular:

A new technique for determining the generation lifetime in fully-depleted, enhancement-mode SOI (silicon-on-insulator) MOSFETs is described. Island isolated, fully depleted n-channel... View More

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