IEEE - Institute of Electrical and Electronics Engineers, Inc. - Significant improvement in characteristics of SOS/MOSFETs by CW-Ar laser-recrystallization

Author(s): Sukegawa, K. ; Matsuoka, H. ; Sasaki, T. ; Park, K.H. ; Kawamura, S. ; Nakano, M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1990
Conference Location: Key West, FL, USA, USA
Conference Date: 2 October 1990
Page(s): 134 - 135
ISBN (Paper): 0-87942-573-3
DOI: 10.1109/SOSSOI.1990.145747
Regular:

Generally in SOS (silicon on sapphire) films, the density of Si defects such as twins and stacking faults is quite high, especially near the Si/sapphire interface, mainly due to the lattice... View More

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