IEEE - Institute of Electrical and Electronics Engineers, Inc. - Bipolar transistors in silicon-on-sapphire (SOS): effects of nanosecond thermal processing

Author(s): Russell, S.D. ; Offord, B.W. ; Weiner, K.H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1990
Conference Location: Key West, FL, USA, USA
Conference Date: 2 October 1990
Page(s): 115 - 116
ISBN (Paper): 0-87942-573-3
DOI: 10.1109/SOSSOI.1990.145736
Regular:

Nanosecond thermal processing (NTP) using a XeCl excimer laser was employed in the fabrication of npn bipolar transistors in silicon-on-sapphire (SOS). Functional devices, with current gain... View More

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