IEEE - Institute of Electrical and Electronics Engineers, Inc. - Limitations to fully-depleted SOI structures

Author(s): Lawrence, R.K. ; Campisi, G.J. ; Shontz, G.J. ; Pollack, G. ; Sundaresan, R.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1990
Conference Location: Key West, FL, USA, USA
Conference Date: 2 October 1990
Page(s): 101 - 102
ISBN (Paper): 0-87942-573-3
DOI: 10.1109/SOSSOI.1990.145729
Regular:

The authors demonstrate the mobility and threshold voltage behavior for fully depleted transistors of various geometries on various epitaxial silicon thicknesses. Electrical characterization... View More

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