IEEE - Institute of Electrical and Electronics Engineers, Inc. - Surface potential at threshold, transconductance, and carrier generation in thin SOI MOSFETs

Author(s): Ioannou, D.E. ; Mazhari, B. ; Zhong, X. ; Cristoloveanu, S. ; Caviglia, A.L.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1990
Conference Location: Key West, FL, USA, USA
Conference Date: 2 October 1990
Page(s): 95 - 96
ISBN (Paper): 0-87942-573-3
DOI: 10.1109/SOSSOI.1990.145726
Regular:

The physics of ultrathin, fully depleted SOI MOSFETs are studied to obtain more accurate device equations and models and a better understanding of the carrier generation properties. It is found... View More

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