IEEE - Institute of Electrical and Electronics Engineers, Inc. - The multistable memory effect in accumulation mode SOI MOSFETs at low temperatures

Author(s): Gao, M.-H. ; Simoen, E. ; Claeys, C. ; Declerck, G.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1990
Conference Location: Key West, FL, USA, USA
Conference Date: 2 October 1990
Page(s): 31 - 32
ISBN (Paper): 0-87942-573-3
DOI: 10.1109/SOSSOI.1990.145694
Regular:

The multistable V/sub T/ behavior of silicon-on-insulator (SOI) MOSFETs is considered. This phenomenon, the MCCM (multistable charge controlled memory) effect, was first found in non-fully... View More

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