IEEE - Institute of Electrical and Electronics Engineers, Inc. - Single event charge enhancement in SOI devices

Author(s): Belhaddad, H. ; Gaillard, R. ; Poirault, G. ; Poncet, A.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1990
Conference Location: Key West, FL, USA, USA
Conference Date: 2 October 1990
Page(s): 27 - 28
ISBN (Paper): 0-87942-573-3
DOI: 10.1109/SOSSOI.1990.145692
Regular:

Studies of single-particle ion effects in SOI (silicon-on-insulator) devices show that a new mechanism can contribute to soft error rates: the electron-hole pairs generated in the silicon... View More

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