IEEE - Institute of Electrical and Electronics Engineers, Inc. - Novel Radiation-Hardened-by-Design (RHBD) 12T Memory Cell for Aerospace Applications in Nanoscale CMOS Technology

Author(s): Jing Guo ; Lei Zhu ; Wenyi Liu ; Hai Huang ; Shanshan Liu ; Tianqi Wang ; Liyi Xiao ; Zhigang Mao
Sponsor(s): IEEE Computer Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 8
ISSN (Paper): 1063-8210
ISSN (Online): 1557-9999
DOI: 10.1109/TVLSI.2016.2645282
Regular:

In this paper, a novel radiation-hardened-by-design (RHBD) 12T memory cell is proposed to tolerate single node upset and multiple-node upset based on upset physical mechanism behind soft... View More

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