IEEE - Institute of Electrical and Electronics Engineers, Inc. - Floating Gate Nonvolatile Memory Using Individually Cladded Monodispersed Quantum Dots

Author(s): Ravi Shankar R. Velampati ; El-Sayed Hasaneen ; E. K. Heller ; Faquir C. Jain
Sponsor(s): IEEE Computer Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 8
ISSN (Paper): 1063-8210
ISSN (Online): 1557-9999
DOI: 10.1109/TVLSI.2016.2645795
Regular:

This paper presents nonvolatile memory characteristics of a quantum dot gate floating gate nonvolatile memory (QDNVM) that employs SiOₓ-cladded silicon quantum dots as discrete charge... View More

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