IEEE - Institute of Electrical and Electronics Engineers, Inc. - Experimental and simulation study of 1D silicon nanowire transistors using heavily doped channels

Author(s): Vihar P. Georgiev ; Muhammad Mirza ; Alexandru-Iustin Dochioiu ; Fikru Adamu-Lema ; Salvatore M. Amoroso ; Ewan Towie ; Craig Riddet ; Donald A. MacLaren ; Asen Asenov ; Douglas J. Paul
Sponsor(s): IEEE Nanotechnology Council
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Paper): 1536-125X
ISSN (Online): 1941-0085
DOI: 10.1109/TNANO.2017.2665691
Regular:

The experimental results from 8 nm diameter silicon nanowire junctionless field effect transistors with gate lengths of 150 nm are presented that demonstrate on-currents up to 1.15 mA/m for 1.0 V... View More

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