IEEE - Institute of Electrical and Electronics Engineers, Inc. - Modeling and Exploration of the Voltage Controlled Magnetic Anisotropy Effect for the Next-Generation Low-Power and High-Speed MRAM Applications

Author(s): Wang Kang ; Yi Ran ; Youguang Zhang ; Weifeng Lv ; Weisheng Zhao
Sponsor(s): IEEE Nanotechnology Council
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Paper): 1536-125X
ISSN (Online): 1941-0085
DOI: 10.1109/TNANO.2017.2660530
Regular:

Spin transfer torque magnetic random access memory (STT-MRAM) has been widely regarded as a potential nonvolatile memory candidate in the next-generation computer architectures. Nevertheless, the... View More

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