IEEE - Institute of Electrical and Electronics Engineers, Inc. - All-GaN Integrated Cascode Heterojunction Field Effect Transistors

Author(s): Sheng Jiang ; Kean Boon Lee ; Ivor Guiney ; Pablo F. Miaja ; Zaffar H. Zaidi ; Hongtu Qian ; David J. Wallis ; Andrew J. Forsyth ; Colin J. Humphreys ; Peter A. Houston
Sponsor(s): IEEE Power Electronics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Paper): 0885-8993
ISSN (Online): 1941-0107
DOI: 10.1109/TPEL.2016.2643499
Regular:

All-GaN integrated cascode heterojunction field effect transistors were designed and fabricated for power switching applications. A threshold voltage of +2 V was achieved using a fluorine... View More

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