IEEE - Institute of Electrical and Electronics Engineers, Inc. - A Novel Nondestructive Bit-Line Discharging Scheme for Deep Submicrometer STT-RAMs

Author(s): Behzad Zeinali ; Jens Madsen ; Praveen Raghavan ; Farshad Moradi
Sponsor(s): IEEE Computer Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Online): 2168-6750
DOI: 10.1109/TETC.2016.2629090
Regular:

A combination of semiconductor integrated circuits (IC) and a dense array of scaled magnetic tunnel junctions (MTJ) makes promising Spin-Transfer Torque Random Access Memory (STT-RAM). This... View More

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