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IEEE - Institute of Electrical and Electronics Engineers, Inc. - Dimension Effect on Breakdown Voltage of Partial SOI LDMOS

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Author(s): Yue Hu ; Huazhen Liu ; Qianqian Xu ; Luwen Wang ; Jing Wang ; Shichang Chen ; Peng Zhao ; Ying Wang ; Gaofeng Wang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Online): 2168-6734
DOI: 10.1109/JEDS.2017.2690363
Regular:

Dimension effect on breakdown voltage (BV) of lateral double-diffused metal-oxide-semiconductor (LDMOS) field-effect transistor in partial silicon-on-insulator (PSOI) technology is... View More

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