IEEE - Institute of Electrical and Electronics Engineers, Inc. - Quantum-mechanical Analysis of Amorphous Oxide-based Thin-film Transistors

Author(s): Jaewook Jeong
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Online): 2168-6734
DOI: 10.1109/JEDS.2017.2679209
Regular:

In this study, we analyzed the electrical characteristics of amorphous oxide-based thin-film transistors (TFTs) with extremely thin active layers using a quantum-mechanical method (density... View More

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