IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effective Passivation with High-density Positive Fixed Charges for GaN MIS-HEMTs

Author(s): Shih-Chien Liu ; Chung-Kai Huang ; Chia-Hua Chang ; Yueh Lin ; Bo-Yuan Chen ; Szu-Ping Tsai ; Burhanuddin Majlis ; Chang-Fu Dee ; Edward Yi Chang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Online): 2168-6734
DOI: 10.1109/JEDS.2017.2669100
Regular:

An effective passivation with high-density positive fixed charges was demonstrated on GaN MIS-HEMTs. The positive fixed charges at the interface between passivation and AlGaN surface can reduce... View More

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