Tsinghua University Press Ltd. - Trapped electron and hole distribution mismatch induced reliability degradation of SONOS type memory devices

Author(s): Guangjian Shi ; Liyang Pan ; Lei Sun ; Zhigang Zhang ; Jun Xu
Publisher: Tsinghua University Press Ltd.
Publication Date: 1 February 2009
Volume: 14
Page(s): 50 - 54
ISSN (Electronic): 1007-0214
DOI: 10.1016/S1007-0214(09)70006-9
Regular:

The reliability of silicon-oxide-nitride-oxide-silicon (SONOS) type memories was analyzed using the charge pumping method and I-V tests at different temperatures to study its endurance and... View More

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