IEEE - Institute of Electrical and Electronics Engineers, Inc. - Nonthermal Plasma Synthesized Boron-Doped Germanium Nanocrystals

Author(s): T. H. Yuan ; X. D. Pi ; D. Yang
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2017
Volume: 23
Page(s): 1 - 5
ISSN (Electronic): 1558-4542
ISSN (Paper): 1077-260X
DOI: 10.1109/JSTQE.2017.2654058
Regular:

Doping enables the effective tuning of the properties of semiconductor nanocrystals (NCs). In this paper, germanium (Ge) NCs are doped with boron (B) in nonthermal plasma. It is shown that B atoms... View More

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